Tool #412 Oxford Ionfab 300 Reactive Ion Beam System

The Oxford Ionfab 300 Reactive Ion Beam System is your tool-of-choice for Chlorine based reactive ion-beam etching. It is also used for inert ion milling.

The Oxford Ionfab 300 Reactive Ion Beam System is equipped with a manual load-lock, ensuring high throughput and low base pressure. The specimen holder can be tilted for directional etching at oblique angles. Ar and Cl₂ can be fed into the ion beam source and Cl₂ and O₂ can be injected near the specimen holder. A filament-free electron emitter ensures neutral ion beam space charge.

Specifications:

Beam current:
15-80 mA

Beam voltage:
200-1500 V

Gases:
Ar, O₂, Cl₂

Base pressure:
~ 1x10^-7 mbar

Process pressure:
> 8x10^-5 mbar

Wafer size:
100mm, or pieces attached (with tape or clamps) to a 100mm transfer wafer

Beam diameter:
150 mm