Tool #404  Oxford Plasmalab 100 Inductively Coulpled Plasma / Reactive Ion Etcher (ICP/RIE)

The Oxford Plasmalab 100 ICP/RIE is primarily intended for etching of III-V semiconductors and dielectrics. For Silicon etching, use tool #311.

The Oxford Plasmalab 100 ICP/RIE is equipped with one load-lock serving two process chambers. Process chamber 1 is for etching using chlorine-based processes and methane/hydrogen based processes. Process chamber 2 is for etching using fluorine-based processes.

The plasma is generated near the bottom electrode and in the upper part of the chamber, independent of each other. The RF power applied to the bottom electrode is capacitive coupled, and offset by a self generated DC-bias. The RF power applied to a water-cooled antenna, winded around the ceramic part of the chamber, couples to the plasma inductively. The vertical electric field near the bottom electrode provides directionality for anisotropic etching. The ICP source can generate the high density of reactive ions needed for high etch rate.

The process chambers are equipped with a laser interferometer endpoint system.

Specifications:

Electrode RF power:
0-500 W

ICP RF power:
Ch1:0-2000 W, Ch2: 0-3000 W

DC-bias:
0-1000V (self-biased)

Base pressure:
~ 3x10^-7 Torr

Process pressure:
1-99 mTorr

Gases Chamber 1:
Cl₂, SiCl₄, CH₄, H₂, Ar, O₂

Gases Chamber 2:
NF₃, CF₄, CHF₃, O₂, H₂, Ar, N₂O, N₂, SiH₄

Wafer size:
100mm, or pieces placed on a 100mm transfer wafer

Funded by: Knut and Alice Wallenbergs foundation.