The equipment is intended for sputter deposition of thin film of metals as well as compounds.

The base presure after overnight pumping is < 5 x 10^-8 mbar. The tool is equipped with a load-lock to ensure high vacuum and fast pumping. Typical pumping time is <30 min. Maximal sample size is 4" wafer, minimal size is not limited. Deposition materials include Ti, Ta, Al, Si, Hf using both RF and DC sputtering. Confocal sputtering geometry allows for co-sputering of the mentioned materials. Reactive sputtering of oxides and nitrides of the mentioned materials is also possible. Heating of the substrate during sputtering process to up to 600°C can be added to the recipe.