The tool is intended for deposition of thin film of metals and dielectric films using 6 sputter guns with 2" diameter arranged in "sputter down" configuration.

The base presure after overnight pumping is < 5 x 10^-8 mbar. The tool is equipped with a load-lock to ensure high vacuum and fast pumping. Typical pumping time is <30 min. Maximal sample size is 4" wafer, minimal size is not limited. Deposition materials include Ti, Ta, Al, Nb, Si and Hf using both RF and DC sputtering. Confocal sputtering geometry allows for co-sputering of the mentioned materials. Reactive sputtering of oxides and nitrides of the mentioned materials is also possible. Heating of the substrate during sputtering process to up to 600°C can be added to the recipe. RF plasma cleaning of substrate is possible. 

Key features:

- A rotating substrate mounting stage with a temperature range of ambient to 600 °C

- Automatic loading through the Load Lock pumped with a turbo pump for quick pumping

- Automatic (recipe) or manual operation

- Pre-cleaning with Ar+ plasma

- RF/DC co-sputtering is possible (1 DC + 1 RF gun running simultaneously, or 1 RF + 1 RF + 1 DC  running simultaneously)

- Current configuration (2026-08-14) is Ti, Ta, and Al targets are mounted on DC magnetrons, and Nb, Hf and Si are mounted on RF magnetrons

- Adding new or custom targets is possible