The Memstar XeF2 vapor release etching allows dry isotropic etching of Si at μm/min etch rates.

Aluminium, SiO2 or photoresist can be used as a mask with close to infinite selectivity. The machine is extremely simple to use and it allows straightforward processing of chips or wafers. The tolos main usage is inteded for Si release etch, etching bridges and such. It is possible to do etch throughs but please contact the tool responsible for the Oxford - Deep Silicon etch, tool #311 first and discuss the possibility of using that tool as a primary deep etch.

Etch Materials: Si, Ge, Mo

Etch rate: from 1-10um/min (pattern and process dependent)

Process range: 1-10Torr

Roughness etched area [rms]: < 10nm

4inch wafer homogeneity [(max-min)/avg] : better than 5%