OXFORD PlasmaPro 100 PECVD system

• High quality PECVD of silicon nitride and silicon dioxide for photonics, dielectric layers, passivation and many other uses
• High quality SiOx, SiNx and SiOxNy deposition for a wide range of applications

Up to 200mm diameter with carrier options available for multi-wafers or small pieces

Wafer stage temperature range: 220-350 C

Endpoint available to ensure optimum clean time