Mask aligner for UV photolithography - wavelenght: 400nm - mask size: 4 inch - material size: 3 inch.
UV-Intensity: 15 mW/cm2 , broadband emission wavelengths constituting 365mn (i-line) , 405nm (h-line), and 436nm (g-line).
Placement: Process lab 1, III/V area
Funded by: Knut and Alice Wallenbergs foundation.