High resolution electron beam lithography system.
| Installed&accepted: |
2016 |
| Funded by: |
Wallenberg |
| Computer control: |
Red Hat Enterprise Linux |
| Control software: |
Raith BEAMS |
| Workpiece size: |
Chips >3-35mm, 2, 3, 4, 5, 6 and 8 inch wafers, 4, 5 and 6 inch masks |
| Materials allowed: |
Any vacuum compatible |
| Autoloader capacity: |
10 cassettes |
| Acceleration voltage: |
100kV |
| Electron source: |
Shottky TFE |
| Spotsize: |
2nm - 150nm |
| Max scanning speed: |
125MHz |
| Min beam step: |
80pm |
| Field size: |
1mm (max) |
| Stitching error |
20nm@1mm writing field |
| Overlay error: |
25nm@1mm writing field |
| Minimum feature size achieved: |
8nm lines in HSQ resist in a 250um area |
The FAQ can be found by going to the LIMS NFL wiki page by following the link "NFL process information wiki" after logging in to LIMS. Then navigate to:
"Maskless lithography" / "Electron beam lithography" / "Raith EBPG5200" / "EBPG5200_FAQ"