Tool #445  ALD – Oxford FlexAl

The Oxford FlexAl Atomic Layer Deposition system is your tool-of-choice for slow, thin film growth of a limited selection of materials.

This tool can operate in two modes: Thermal ALD and Plasma ALD

Note that the film growth literally is atomic layer-by-layer, where each cycle includes switching of gas and onset of plasma. Therefore the maximum allowed film thickness is ~100nm.

Specifications:

Precursors:
TMA (Aluminium), TEMAH (Hafnium), BTBAS (silicon oxide), TBTDET (tantalum oxide)

Process gases:
O₂, N₂, NH₃

Available films:
Al₂O₃, AlN, HfO₂, SiO₂, Ta2O₅

Base pressure:
~ 1x10^-6 mbar

Wafer size:
Standard setup for Ø150mm wafers. Smaller wafers and pieces are placed on a Ø150mm carrier wafer. Possible to process Ø 200 mm wafers

Substrate temperature:
100°C - 400°C,  Recipe and film quality dependant.