The epi 930 model molecular beam epitaxy (MBE) system bought in 1998, is dedicated to III-V materials such as GaAs, InP and their compounds. It can accommodate a single substrate up to 3” in size. There are totally 9 available ports for different material sources. Available sources are Ga, In and Al (group III), As and P (group V), Si, Be and a RF plasma source for nitrogen enabling the growth of diluted nitrides. The system is equipped by a 15 KV RHEED electron gun, an RGA and a pyrometer.

Funded by: Knut and Alice Wallenbergs foundation.