Picture of Dry etch RIBE - Oxford Ionfab 300
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Tool #412 Oxford Ionfab 300 Reactive Ion Beam System

The Oxford Ionfab 300 Reactive Ion Beam System is your tool-of-choice for Chlorine based reactive ion-beam etching. It is also used for inert ion milling.

The Oxford Ionfab 300 Reactive Ion Beam System is equipped with a manual load-lock, ensuring high throughput and low base pressure. The specimen holder can be tilted for directional etching at oblique angles. Ar and Cl2 can be fed into the ion beam source and Cl2 and O2 can be injected near the specimen holder. A filament-free electron emitter ensures neutral ion beam space charge.

Specifications:

Beam current:
15-80 mA

Beam voltage:
200-1500 V

Gases:
Ar, O2, Cl2

Base pressure:
~ 1x10-7 mbar

Process pressure:
> 8x10-5 mbar

Wafer size:
100mm, or pieces attached (with tape or clamps) to a 100mm transfer wafer

Beam diameter:
150 mm

Tool name:
Dry etch RIBE - Oxford Ionfab 300
Area/room:
Processlab 1
Category:
Dry etching
Manufacturer:
Oxford Plasma Technology
Model:
Ionfab 300
Max booking time, day:
8 hours
Max booking time, night:
8 hours
No. of future bookings:
5

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