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Plasma enhanced deposition at 300°C of Si3N4 and SiO2. For 6" wafers, smaller wafers need a 6" carrier wafer. Gases: SiH4 (2%), NH3, N2O

Funded by: Knut and Alice Wallenbergs foundation.

Tool name:
PECVD - STS
Area/room:
Processlab 1
Category:
Thin film deposition
Manufacturer:
STS
Model:
PECVD
Max booking time, day:
3 hours
Max booking time, night:
3 hours
No. of future bookings:
3

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