Tool #405  Oxford PlasmaPro 100 Inductively Coulpled Plasma / Reactive Ion Etcher (ICP/RIE)

The Oxford PlasmaPro 100 ICP/RIE is primarily intended for cryo-etching silicon, etching dielectrics and III-V semiconductors.

The Oxford PlasmaPro 100 ICP/RIE is equipped with a load-lock and a temperature stabalized sample stage. This tool is using fluorine-based etching processes.

The plasma is generated near the bottom electrode and in the upper part of the chamber, independent of each other. The RF power applied to the bottom electrode is capacitive coupled, and offset by a self generated DC-bias. The RF power applied to a water-cooled antenna, winded around the ceramic part of the chamber, couples to the plasma inductively. The vertical electric field near the bottom electrode provides directionality for anisotropic etching. The ICP source can generate the high density of reactive ions needed for high etch rate.

The process chamber is equipped with a laser interferometer endpoint system.

Specifications:

Electrode RF power:
0-600 W

ICP RF power:
0-3000 W

DC-bias:
0-1000V (self-biased)

Base pressure:
< 5x10^-7 Torr

Process pressure:
0-100 mTorr

Gases chamber 2:
NF₃, CF₄, CHF₃, O₂, Ar, N₂, SF_6, HBr

Stage temperatur range:
-160C to 400C

Wafer size:
100mm, or pieces placed on a 100mm transfer wafer

Funded by: Knut and Alice Wallenbergs foundation.