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Tool #445  ALD – Oxford FlexAl

The Oxford FlexAl Atomic Layer Deposition system is your tool-of-choice for slow, thin film growth of a limited selection of materials.

This tool can operate in two modes: Thermal ALD and Plasma ALD

Note that the film growth literally is atomic layer-by-layer, where each cycle includes switching of gas and onset of plasma. Therefore the maximum allowed film thickness is ~100nm.

 

Specifications:

Precursors:
TMA (Aluminium), TEMAH (Hafnium)

Process gases:
O2, N2, NH3

Available films:
Al2O3, AlN, HfO2

Base pressure:
~ 1x10-6 mbar

Wafer size:
Wafers and pieces placed on a Ø200mm carrier wafer.

Substrate temperature:
100°C - 400°C,  Recipe and film quality dependant.

 

Tool name:
ALD - Oxford FlexAl
Area/room:
Processlab 1
Category:
Thin film deposition
Manufacturer:
Oxford Instruments
Model:
FlexAl
Max booking time, day:
4 hours
Max booking time, night:
4 hours
No. of future bookings:
2

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