Tool #445 ALD – Oxford FlexAl
The Oxford FlexAl Atomic Layer Deposition system is your tool-of-choice for slow, thin film growth of a limited selection of materials.
This tool can operate in two modes: Thermal ALD and Plasma ALD
Note that the film growth literally is atomic layer-by-layer, where each cycle includes switching of gas and onset of plasma. Therefore the maximum allowed film thickness is ~100nm.
TMA (Aluminium), TEMAH (Hafnium), BTBAS (silicon oxide), TBTDET (tantalum oxide)
O2, N2, NH3
Al2O3, AlN, HfO2, SiO2, Ta2O5
~ 1x10-6 mbar
Standard setup for Ø150mm wafers. Smaller wafers and pieces are placed on a Ø150mm carrier wafer. Possible to process Ø 200 mm wafers
100°C - 400°C, Recipe and film quality dependant.