Picture of MBE - EPI 930
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The epi 930 model molecular beam epitaxy (MBE) system bought in 1998, is dedicated to III-V materials such as GaAs, InP and their compounds. It can accommodate a single substrate up to 3” in size. There are totally 9 available ports for different material sources. Available sources are Ga, In and Al (group III), As and P (group V), Si, Be and a RF plasma source for nitrogen enabling the growth of diluted nitrides. The system is equipped by a 15 KV RHEED electron gun, an RGA and a pyrometer.

Funded by: Knut and Alice Wallenbergs foundation.

Tool name:
MBE - EPI 930
Area/room:
MBE-Lab
Category:
Epitaxy
Manufacturer:
MBE
Model:
EPI 930
Max booking time, day:
10 hours
Max booking time, night:
10 hours
No. of future bookings:
5

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