Low pressure chemical vapour deposition of silicon nitride from dichlorosilane (DCS) and ammonia (NH3).
Available recipes with approximate data:
NIT770 Temp= 770C, uniformity (std dev/mean)= 1.1%, stress (Max, MPa)= 1069, stress (Avg, MPa)= 695 (tensile), refractive index (633 nm) = 2.0
LSNIT820 Temp= 820C, uniformity (std dev/mean)= 4.3%, stress (Max, MPa)=277, stress (Avg, MPa)=247 (tensile), refractive index (633 nm) = 2.2
Recent data:
20140331:
Recipe NITVAR: 820 deg, 250mT, 209 DSC, 32 NH3
D/R: 5.7 nm/min
RI: 2,2
Uniformity (3"): 15%
20140403:
Recipe NIT770: D/R: 3.6 nm/min, uniformity (6"): 2.3%
20140910:
Recipe NIT770: D/R: 3.6 nm/min, uniformity (3"): 1.5%
20150219:
Recipe LSNIT770: D/R: 3.0 nm/min, uniformity (3"): 2%
Stress (tensile), avg: 857 MPa
Stress (tensile), max: 1006 MPa
20150415:
Recipe NIT770: D/R: 4.0 nm/min, RI: 2.0, uniformity (3"): 1.6%
20150505:
Recipe LSNIT820: D/R: 4.9 nm/min, RI: 2.2, uniformity (4"): 5%
20150812:
Recipe LSNIT820: D/R: 6.7 nm/min, RI: 2.2, uniformity (3"): 5.2%
20151002:
Recipe LSNIT820: D/R: 5.7 nm/min, RI: 2.2, uniformity (4"): 5.7%
20151012:
Recipe LSNIT820: D/R: 6.6 nm/min, RI: 2.2, uniformity (3"): 3.8% (292nm film thickness)
20151124:
Recipe LSNIT820: D/R: 5.6 nm/min, RI: 2.2, uniformity (4"): 2.6% (350nm film thickness)
20151126:
Recipe LSNIT820: D/R: 5.6 nm/min, RI: 2.2, uniformity (4"): 2.6% (350nm film thickness)
20151217:
Recipe LSNIT820: D/R: 6.1 nm/min, RI: 2.2, uniformity (4"): 3.3% (target 350nm, meas. 378 mean film thickness)
Dep. time 62min.
Using every third slot, boat with 1mm wide openings
20151228:
Recipe LSNIT820: D/R: 5.7 nm/min, RI: 2.2, uniformity (4"): 3.2% (target 350nm, meas. 357 mean film thickness)
Dep. time 62min.
20160105:
Recipe LSNIT820: D/R: 5.2 nm/min, RI: 2.2, uniformity (4"): 2.5% (target 350nm, meas. 324 mean film thickness)
Dep. time 62min.
20160217:
Recipe LSNIT820: D/R: 5.9 nm/min, RI: 2.2, uniformity (4"): 4.3% (target 300nm, meas. 342 mean film thickness)
Dep. time 58min.
20160301:
Recipe LSNIT820: D/R: 6.2 nm/min, RI: 2.2, uniformity (4"): 4.8% (target 350nm, meas. 386 mean film thickness)
Dep. time 62min.
20160404:
Recipe LSNIT820: D/R: 6.2 nm/min, RI: 2.2, uniformity (4"): 4.2% (target 350nm, meas. 385 mean film thickness)
Dep. time 62min.
20160404:
Recipe NIT770: D/R: 3.7 nm/min, RI: 2.0, uniformity (4"): 1.3% (target 60nm, meas. 64 mean film thickness)
Dep. time 17min.
20160415:
Recipe LSNIT820: D/R: 5.8 nm/min, RI: 2.2, uniformity (4"): 3.5% (target 350nm, meas. 355 mean film thickness)
Dep. time 61min.
20160418:
Recipe NIT770: D/R: 3.5 nm/min, RI: 2.0, uniformity (3"): 3.3% (target 60nm, meas. 53 mean film thickness)
Dep. time 15min.
20160425:
Recipe LSNIT820: D/R: 6.25 nm/min, RI: 2.2, uniformity (4"): 3.9% (target 120nm, meas. 125 mean film thickness)
Dep. time 20min. Avg. stress (MPa)= 392
20160427:
Recipe LSNIT770: D/R: 3.13 nm/min, RI: 2.1, uniformity (3"): 1.9% (target 300nm, meas. 263 mean film thickness)
Dep. time 84min.
20160503:
Recipe LSNIT820: D/R: 6.7 nm/min, RI: 2.2, uniformity (3"): 4.3% (target 400nm, meas. 420 mean film thickness)
Dep. time 62min.
20160801:
Recipe LSNIT820: D/R: 6.2 nm/min, RI: 2.2, uniformity (4"): 4.7% (target 350nm, meas. 381 mean film thickness)
Dep. time 61min.
20160825:
Recipe LSNIT820: D/R: 5.5 nm/min, RI: 2.2, uniformity (4"): 4.9% (target 300nm, meas. 268 mean film thickness)
Dep. time 48min.
20161012:
Recipe LSNIT820: D/R: 7.4 nm/min, RI: 2.2, uniformity (3"): 5.5% (target 135nm, meas. 148 mean film thickness)
Dep. time 20min.
20161123:
Recipe NIT770: D/R: 4.1 nm/min, RI: 2.0, uniformity (3"): 1.4% (target 40nm, meas. 41 mean film thickness)
Dep. time 10min.
20170117:
Recipe NIT770: D/R: 4.0 nm/min, RI: 2.0, uniformity (3"): 1.4% (target 40nm, meas. 40 mean film thickness)
Dep. time 10min.
20170118:
Recipe LSNIT820: D/R: 5.2 nm/min, RI: 2.2, uniformity (4"): 4.0% (target 325nm, meas. 306 mean film thickness)
Dep. time 59min.
20170127:
Recipe NIT770: D/R: 4.2 nm/min, RI: 1.9, uniformity (3"): 1.8% (target 60nm, meas. 62.7 mean film thickness)
Dep. time 15min.
20170213:
Recipe NIT770: D/R: 4.4 nm/min, RI: 1.9, uniformity (3"): 1.8% (target 40nm, meas. 43.8 mean film thickness)
Dep. time 10min.
20170308:
Recipe LSNIT820: D/R: 6.2 nm/min, RI: 2.2, uniformity (4"): 4.1% (target 185nm, meas. 217 mean film thickness)
Dep. time 35min.
20170313:
Recipe LSNIT820: D/R: 7.0 nm/min, RI: 2.2, uniformity (3"): 5.1% (target 400 nm, meas. 387 nm mean film thickness)
Dep. time 55min.
20170407:
Recipe LSNIT820: D/R: 5.4 nm/min, RI: 2.2, uniformity (6"): 7.3% (target 200 nm, meas. 180 nm mean film thickness), number of wafers: 10
Dep. time 33 min.
20170418:
Recipe LSNIT820: D/R: 6.2 nm/min, RI: 2.2, uniformity (4"): 4.7% (target 325 nm, meas. 325 nm mean film thickness), number of wafers: 25
Dep. time 52 min.
20170419:
Recipe LSNIT820: D/R: 6.3 nm/min, RI: 2.2, uniformity (4"): 4.7% (target 325 nm, meas. 328 nm mean film thickness), number of wafers: 25
Dep. time 52 min.
20170502:
Recipe LSNIT820: D/R: 6.5 nm/min, RI: 2.2, uniformity (4"): 4.9% (target 110 nm, meas. 117 nm mean film thickness), number of wafers: 11
Dep. time 18 min.
20170512:
Recipe NIT770: D/R: 4.4 nm/min, RI: 2.0, uniformity (3"): 1.7% (target 40nm, meas. 44.1 mean film thickness)
Dep. time 10min., number of wafers: 1
20170804:
Recipe LSNIT820: D/R: 6.2 nm/min, RI: 2.2, uniformity (4"): 5.0% (target 350nm, meas. 362 mean film thickness)
Dep. time 58min., number of wafers: 50
20181107:
Recipe LSNIT820: D/R: 6.8 nm/min, RI: 2.2, uniformity (3"): 5.6% (target 70 nm, meas. 68.7 mean film thickness)
Dep. time 10 min., number of wafers: 7
20181126:
Recipe NIT770: D/R: 4.4 nm/min, RI: 1.99, uniformity (3"): 1.6% (target 44 nm, meas. 44.0 mean film thickness)
Dep. time 10 min., number of wafers: 5
20181203:
Recipe NIT770: D/R: 4.4 nm/min, RI: 1.99, uniformity (3"): 1.5% (target 44 nm, meas. 44.0 mean film thickness)
Dep. time 10 min., number of wafers: 6
20190219:
Recipe LSNIT820: D/R: 6.6 nm/min, RI: 2.2, uniformity (3"): 5.0% (target 66 nm, meas. 66.0 mean film thickness)
Dep. time 10 min., number of wafers: 1+6
20190410:
Recipe NIT770: D/R: 4.0 nm/min, RI: 1.99, uniformity (3"): 1.3% (target 40 nm, meas. 40.3 mean film thickness)
Dep. time 10 min., number of wafers: 1
20190417:
Recipe LSNIT820: D/R: 5.6 nm/min, RI: 2.2, uniformity (4"): 4.2% (target 50 nm, meas. 45.0 mean film thickness)
Dep. time 8 min., number of wafers: 5+16+4
20190424:
Recipe LSNIT820: D/R: 5.4 nm/min, RI: 2.2, uniformity (4"): 3.6% (target 200 nm, meas. 194.0 mean film thickness)
Dep. time 36 min., number of wafers: 5+16+4
20190425:
Recipe NIT770: D/R: 3.7 nm/min, RI: 1.99, uniformity (4"): 1.2% (target 50 nm, meas. 48.0 mean film thickness)
Dep. time 13 min., number of wafers: 5+7+5
20190502:
Recipe NIT770: D/R: 3.7 nm/min, RI: 2.0, uniformity (4"): 1.4% (target 100 nm, meas. 99.9 mean film thickness)
Dep. time 27 min., number of wafers: 5+7+4
20190529:
Recipe NIT770: D/R: 4.2 nm/min, RI: 2.0, uniformity (3"): 1.0% (target 200 nm, meas. 211 mean film thickness)
Dep. time 50 min., number of wafers: 5+4+4
20190903:
Recipe LSNIT820: D/R: 5.3 nm/min, RI: 2.2, uniformity (3"): 3.12% (target 400 nm, meas. 315.0 mean film thickness)
Dep. time 59 min., number of wafers: 44
20191011:
Recipe LSNIT820: D/R: 6.4 nm/min, RI: 2.2, uniformity (3"): 5.14% (target 430 nm, meas. 517.0 mean film thickness)
Dep. time 81 min., number of wafers: 15
20191016:
Recipe LSNIT820: D/R: 6.4 nm/min, RI: 2.2, uniformity (3"): 5.0% (target 430 nm, meas. 428 nm mean film thickness)
Dep. time 68 min., number of wafers: 15
20191118: Quartz tubes replaced!
20191118:
Recipe NIT770: D/R: 4.1 nm/min, RI: 2.0, uniformity (3"): 1.1% (target 80 nm, meas. 82 mean film thickness)
Dep. time 20 min., number of wafers: 4+1+4
20191118:
Recipe LSNIT820: D/R: 7.1 nm/min, RI: 2.2, uniformity (3"): 4.3% (target 140 nm, meas. 142 mean film thickness)
Dep. time 20 min., number of wafers: 4+1+4
20200203:
Recipe NIT770: D/R: 4.1 nm/min, RI: 2.0, uniformity (3"): 1.3% (target 40 nm, meas. 41 mean film thickness)
Dep. time 10 min., number of wafers: 4+1+4
20200518:
Recipe NIT770: D/R: 3.8 nm/min, RI: 2.0, uniformity (3"): 1.4% (target 40 nm, meas. 38 mean film thickness)
Dep. time 10 min., number of wafers: 4+1+4
20200814:
Recipe NIT770: D/R: 4.0 nm/min, RI: 2.0, uniformity (3"): 1.4% (target 40 nm, meas. 40 mean film thickness)
Dep. time 10 min., number of wafers: 4+1+4
20201008:
Recipe NIT770: D/R: 3.6 nm/min, RI: 2.0, uniformity (3"): 1.1% (target 40 nm, meas. 36 mean film thickness)
Dep. time 10 min., number of wafers: 4+1+4
20210209:
Recipe NIT770: D/R: 4.1 nm/min, RI: 1.9, uniformity (3"): 1.2% (target 40 nm, meas. 41 mean film thickness)
Dep. time 10 min., number of wafers: 4+1+4
2021-02-09:
Recipe NIT770: D/R: 4.1 nm/min, RI: 2.0, uniformity (3"): 1.0% (target 120 nm, meas. 123 mean film thickness)
Dep. time 30 min., number of wafers: 4+1+4
2021-03-19
Recipe NIT770: D/R: 3.9 nm/min, RI: 2.0, uniformity (3"): 1.0 % (target 120 nm, meas. 117 mean film thickness) Dep. time 30 min, number of wafers: 4+1+4
2021-06-10
Recipe NIT770: D/R: 3.5 nm/min, RI: 2.0, uniformity (4"): 0.8 % (target 74 nm, meas. 70 mean film thickness) Dep. time 20 min, number of wafer: 4+1+4
2021-06-10
Recipe NIT770: D/R: 3.8 nm/min, RI: 2.0, uniformity (3"): 0.9 % (target 120 nm, meas. 115 mean film thickness) Dep. time 30 min, number of wafer: 4+1+4
2021-08-24
Recipe NIT770: D/R: 3.9 nm/min, RI: 2.0, uniformity (3"): 1.0 % (target 120 nm, meas. 118 mean film thickness) Dep. time 30 min, number of wafer: 4+1+4
2022-03-07
Recipe NIT770: D/R: 3.8 nm/min, RI: 2.0, uniformity (3"): 0.9 % (target 117 nm, meas. 113 mean film thickness) Dep. time 30 min, number of wafer: 4+1+4
2022-09-20
Recipe NIT770: D/R: 3.7 nm/min, RI: 2.0, uniformity (4"): 1.9 % (target 105 nm, meas. 110 mean film thickness) Dep. time 30 min, number of wafer: 4+1+4
2022-11-17
Recipe NIT770: D/R: 3.6 nm/min, RI: 2.0, uniformity (4"): 1.4 % (target 105 nm, meas. 107 mean film thickness) Dep. time 30 min, number of wafer: 4+1+4
2022-12-16
Recipe NIT770: D/R: 3.6 nm/min, RI: 2.0, uniformity (4"): 1.4 % (target 108 nm, meas. 109 mean film thickness) Dep. time 30 min, number of wafer: 4+1+4
2023-01-26
Recipe NIT770: D/R: 3.6 nm/min, RI: 2.0, uniformity (4"): 1.7 % (target 108 nm, meas. 108 mean film thickness) Dep. time 30 min, number of wafer: 4+1+4
2023-11-28
Recipe NIT770: D/R: 3.6 nm/min, RI: 2.0, uniformity (4"): 1.7 % (target 108 nm, meas. 108 mean film thickness) Dep. time 30 min, number of wafer: 4+1+4