Picture of Furnace - Centrotherm #4-3  LPCVD - SiN
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LPCVD furnace for silicon nitride deposition.

Available recipes with approximate data:

NIT770    Temp= 770C, Uniformity (std dev/mean)= 1.5%, Stress (MPa)= 1250, Refractive index (663 nm) = 2.0

LSNIT770  Temp= 770C, Uniformity (std dev/mean)= 2%, Stress (MPa)= 850, Refractive index (663 nm) = 2.14

LSNIT820    Temp= 820C, Uniformity (std dev/mean)= 5%,  Stress (MPa)= 343, Refractive index (663 nm) = 2.21

 

Recent data:

20140331:

Recipe NITVAR: 820 deg, 250mT, 209 DSC, 32 NH3

D/R: 5.7 nm/min

RI: 2,2

Uniformity (3"): 15%

 

20140403:

Recipe NIT770: D/R: 3.6 nm/min, uniformity (6"): 2.3%

 

20140910:

Recipe NIT770: D/R: 3.6 nm/min, uniformity (3"): 1.5%

 

20150219:


Recipe LSNIT770: D/R: 3.0 nm/min, uniformity (3"): 2%

Stress (tensile), avg:  857 MPa

Stress (tensile), max: 1006 MPa

 

20150415:

Recipe NIT770: D/R: 4.0 nm/min, RI: 2.0, uniformity (3"): 1.6%
 

20150505:


Recipe LSNIT820: D/R: 4.9 nm/min, RI: 2.2, uniformity (4"): 5%

 

20150812:

 

Recipe LSNIT820: D/R: 6.7 nm/min, RI: 2.2, uniformity (3"): 5.2%

 

20151002:

Recipe LSNIT820: D/R: 5.7 nm/min, RI: 2.2, uniformity (4"): 5.7%

 

20151012:

Recipe LSNIT820: D/R: 6.6 nm/min, RI: 2.2, uniformity (3"): 3.8% (292nm film thickness)

 

20151124:

Recipe LSNIT820: D/R: 5.6 nm/min, RI: 2.2, uniformity (4"): 2.6% (350nm film thickness)

 

20151126:

Recipe LSNIT820: D/R: 5.6 nm/min, RI: 2.2, uniformity (4"): 2.6% (350nm film thickness)


20151217:

Recipe LSNIT820: D/R: 6.1 nm/min, RI: 2.2, uniformity (4"): 3.3% (target 350nm, meas. 378 mean film thickness)

Dep. time 62min.

Using every third slot, boat with 1mm wide openings

 

20151228:

Recipe LSNIT820: D/R: 5.7 nm/min, RI: 2.2, uniformity (4"): 3.2% (target 350nm, meas. 357 mean film thickness)

Dep. time 62min.

 

20160105:

Recipe LSNIT820: D/R: 5.2 nm/min, RI: 2.2, uniformity (4"): 2.5% (target 350nm, meas. 324 mean film thickness)

Dep. time 62min.

 

20160217:

Recipe LSNIT820: D/R: 5.9 nm/min, RI: 2.2, uniformity (4"): 4.3% (target 300nm, meas. 342 mean film thickness)

Dep. time 58min.

 

20160301:

Recipe LSNIT820: D/R: 6.2 nm/min, RI: 2.2, uniformity (4"): 4.8% (target 350nm, meas. 386 mean film thickness)

Dep. time 62min.

 

20160404:

Recipe LSNIT820: D/R: 6.2 nm/min, RI: 2.2, uniformity (4"): 4.2% (target 350nm, meas. 385 mean film thickness)

Dep. time 62min.

 

20160404:

Recipe NIT770: D/R: 3.7 nm/min, RI: 2.0, uniformity (4"): 1.3% (target 60nm, meas. 64 mean film thickness)

Dep. time 17min.

 

20160415:

Recipe LSNIT820: D/R: 5.8 nm/min, RI: 2.2, uniformity (4"): 3.5% (target 350nm, meas. 355 mean film thickness)

Dep. time 61min.

 

20160418:

Recipe NIT770: D/R: 3.5 nm/min, RI: 2.0, uniformity (3"): 3.3% (target 60nm, meas. 53 mean film thickness)

Dep. time 15min.

 

20160425:

Recipe LSNIT820: D/R: 6.25 nm/min, RI: 2.2, uniformity (4"): 3.9% (target 120nm, meas. 125 mean film thickness)

Dep. time 20min. Avg. stress (MPa)= 392

 

20160427:

Recipe LSNIT770: D/R: 3.13 nm/min, RI: 2.1, uniformity (3"): 1.9% (target 300nm, meas. 263 mean film thickness)

Dep. time 84min.

 

20160503:

Recipe LSNIT820: D/R: 6.7 nm/min, RI: 2.2, uniformity (3"): 4.3% (target 400nm, meas. 420 mean film thickness)

Dep. time 62min.

 

20160801:

Recipe LSNIT820: D/R: 6.2 nm/min, RI: 2.2, uniformity (4"): 4.7% (target 350nm, meas. 381 mean film thickness)

Dep. time 61min.

 

20160825:

Recipe LSNIT820: D/R: 5.5 nm/min, RI: 2.2, uniformity (4"): 4.9% (target 300nm, meas. 268 mean film thickness)

Dep. time 48min.


20161012:

Recipe LSNIT820: D/R: 7.4 nm/min, RI: 2.2, uniformity (3"): 5.5% (target 135nm, meas. 148 mean film thickness)

Dep. time 20min.

 

20161123:

Recipe NIT770: D/R: 4.1 nm/min, RI: 2.0, uniformity (3"): 1.4% (target 40nm, meas. 41 mean film thickness)

Dep. time 10min.

 

20170117:

Recipe NIT770: D/R: 4.0 nm/min, RI: 2.0, uniformity (3"): 1.4% (target 40nm, meas. 40 mean film thickness)

Dep. time 10min.

 

20170118:

Recipe LSNIT820: D/R: 5.2 nm/min, RI: 2.2, uniformity (4"): 4.0% (target 325nm, meas. 306 mean film thickness)

Dep. time 59min.

 

20170127:

Recipe NIT770: D/R: 4.2 nm/min, RI: 1.9, uniformity (3"): 1.8% (target 60nm, meas. 62.7 mean film thickness)

Dep. time 15min.

 

20170213:

Recipe NIT770: D/R: 4.4 nm/min, RI: 1.9, uniformity (3"): 1.8% (target 40nm, meas. 43.8 mean film thickness)

Dep. time 10min.

 

20170308:

Recipe LSNIT820: D/R: 6.2 nm/min, RI: 2.2, uniformity (4"): 4.1% (target 185nm, meas. 217 mean film thickness)

Dep. time 35min.

 

20170313:

Recipe LSNIT820: D/R: 7.0 nm/min, RI: 2.2, uniformity (3"): 5.1% (target 400 nm, meas. 387 nm mean film thickness)

Dep. time 55min.

 

20170407:

Recipe LSNIT820: D/R: 5.4 nm/min, RI: 2.2, uniformity (6"): 7.3% (target 200 nm, meas. 180 nm mean film thickness), number of wafers: 10

Dep. time 33 min.

 

20170418:

Recipe LSNIT820: D/R: 6.2 nm/min, RI: 2.2, uniformity (4"): 4.7% (target 325 nm, meas. 325 nm mean film thickness), number of wafers: 25

Dep. time 52 min.

 

20170419:

Recipe LSNIT820: D/R: 6.3 nm/min, RI: 2.2, uniformity (4"): 4.7% (target 325 nm, meas. 328 nm mean film thickness), number of wafers: 25

Dep. time 52 min.

 

20170502:

Recipe LSNIT820: D/R: 6.5 nm/min, RI: 2.2, uniformity (4"): 4.9% (target 110 nm, meas. 117 nm mean film thickness), number of wafers: 11

Dep. time 18 min.

 

20170512:

Recipe NIT770: D/R: 4.4 nm/min, RI: 2.0, uniformity (3"): 1.7% (target 40nm, meas. 44.1 mean film thickness)

Dep. time 10min., number of wafers: 1

 

20170804:

Recipe LSNIT820: D/R: 6.2 nm/min, RI: 2.2, uniformity (4"): 5.0% (target 350nm, meas. 362 mean film thickness)

Dep. time 58min., number of wafers: 50

 

20181107:


Recipe LSNIT820: D/R: 6.8 nm/min, RI: 2.2, uniformity (3"): 5.6% (target 70 nm, meas. 68.7 mean film thickness)

Dep. time 10 min., number of wafers: 7

 

20181126:
Recipe NIT770: D/R: 4.4 nm/min, RI: 1.99, uniformity (3"): 1.6% (target 44 nm, meas. 44.0 mean film thickness)
Dep. time 10 min., number of wafers: 5


20181203:
Recipe NIT770: D/R: 4.4 nm/min, RI: 1.99, uniformity (3"): 1.5% (target 44 nm, meas. 44.0 mean film thickness)
Dep. time 10 min., number of wafers: 6


20190219:
Recipe NIT820: D/R: 6.6 nm/min, RI: 2.2, uniformity (3"): 5.0% (target 66 nm, meas. 66.0 mean film thickness)
Dep. time 10 min., number of wafers: 1+6

20190410:
Recipe NIT770: D/R: 4.0 nm/min, RI: 1.99, uniformity (3"): 1.3% (target 40 nm, meas. 40.3 mean film thickness)
Dep. time 10 min., number of wafers: 1

20190417:
Recipe NIT820: D/R:  5.6 nm/min, RI: 2.2, uniformity (4"): 4.2% (target 50 nm, meas. 45.0 mean film thickness)
Dep. time 8 min., number of wafers: 5+16+4

20190424:
Recipe NIT820: D/R:  5.4 nm/min, RI: 2.2, uniformity (4"): 3.6% (target 200 nm, meas. 194.0 mean film thickness)
Dep. time 36 min., number of wafers: 5+16+4

20190425:
Recipe NIT770: D/R: 3.7 nm/min, RI: 1.99, uniformity (4"): 1.2% (target 50 nm, meas. 48.0 mean film thickness)
Dep. time 13 min., number of wafers: 5+7+5

20190502:
Recipe NIT770: D/R: 3.7 nm/min, RI: 2.0, uniformity (4"): 1.4% (target 100 nm, meas. 99.9 mean film thickness)
Dep. time 27 min., number of wafers: 5+7+4

20190529:
Recipe NIT770: D/R: 4.2 nm/min, RI: 2.0, uniformity (3"): 1.0% (target 200 nm, meas. 211 mean film thickness)
Dep. time 50 min., number of wafers: 5+4+4

Tool name:
Furnace - Centrotherm #4-3 LPCVD - SiN
Area/room:
Processlab 1
Category:
Thermal processing
Manufacturer:
Centrotherm
Model:
LPCVD Furnace
Max booking time, day:
24 hours
Max booking time, night:
24 hours
No. of future bookings:
3

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